LONGITUDINAL MAGNETORESISTANCE OF P-TYPE SILICON UNDER UNIAXIAL ELASTIC DEFORMATION

Авторы

  • L.U. Taimuratova The Sh. Esenov Caspian state University of technology and engineering Aktau, Kazakhstan
  • A. Seitmuratov Korkyt Ata Kyzylorda State University, Kyzylorda, Kazakhstan

Ключевые слова:

magneto resistance, pyezo resistance, silicon, uniaxial elastic deformation.

Аннотация

An increase in the mobility of holes and electrons at uniaxial stress (compression or tension) was
found, that is important in the technology of manufacturing transistors. We present the results of the pyezo resistance
phenomenon, which increases the mobility of holes and electrons when uniaxial pressure is applied to the main
crystallographic axes. It means the transformation by uniaxial pressure of the isoenergetical surface.

Загрузки

Опубликован

2019-12-12

Как цитировать

L.U. Taimuratova, & A. Seitmuratov. (2019). LONGITUDINAL MAGNETORESISTANCE OF P-TYPE SILICON UNDER UNIAXIAL ELASTIC DEFORMATION. «Доклады НАН РК», (6), 10–13. извлечено от http://91834.libg.asia/reports-science/article/view/1788

Выпуск

№ 6 (2019): Доклады НАН РК

Раздел

Статьи